Dominant point defects in doped cadmium telluride CdTe:Ge

Quasi-chemical equations have been proposed for the formation of point defects (PD) and complexes thereof in germanium-doped cadmium telluride single crystals. Baric and temperature dependences of dominant PD and free charge carriers concentrations in CdTe:Ge have been obtained. Equilibrium constant...

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Бібліографічні деталі
Дата:2007
Автори: Freik, D.M., Pysklynets, U.M., Mezhylovska, L.Y.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2007
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/136487
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Dominant point defects in doped cadmium telluride CdTe:Ge / D.M. Freik, U.M. Pysklynets, L.Y. Mezhylovska // Functional Materials. — 2007. — Т. 14, № 2. — С. 181-186. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1364872018-06-17T03:09:11Z Dominant point defects in doped cadmium telluride CdTe:Ge Freik, D.M. Pysklynets, U.M. Mezhylovska, L.Y. Quasi-chemical equations have been proposed for the formation of point defects (PD) and complexes thereof in germanium-doped cadmium telluride single crystals. Baric and temperature dependences of dominant PD and free charge carriers concentrations in CdTe:Ge have been obtained. Equilibrium constants for quasi-chemical equations of complex (GeCd⁺VCd²⁻)⁻ formation have been determined as well as those for germanium transition from cation to anion sublattice of the main matrix. Results of the investigation have been explained by restricted solubility of the dopant under high temperature equilibrium of the PD. Dependence of germanium solubility in CdTe upon temperature and partial pressure of cadmium vapor have been calculated theoretically. 2007 Article Dominant point defects in doped cadmium telluride CdTe:Ge / D.M. Freik, U.M. Pysklynets, L.Y. Mezhylovska // Functional Materials. — 2007. — Т. 14, № 2. — С. 181-186. — Бібліогр.: 12 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136487 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Quasi-chemical equations have been proposed for the formation of point defects (PD) and complexes thereof in germanium-doped cadmium telluride single crystals. Baric and temperature dependences of dominant PD and free charge carriers concentrations in CdTe:Ge have been obtained. Equilibrium constants for quasi-chemical equations of complex (GeCd⁺VCd²⁻)⁻ formation have been determined as well as those for germanium transition from cation to anion sublattice of the main matrix. Results of the investigation have been explained by restricted solubility of the dopant under high temperature equilibrium of the PD. Dependence of germanium solubility in CdTe upon temperature and partial pressure of cadmium vapor have been calculated theoretically.
format Article
author Freik, D.M.
Pysklynets, U.M.
Mezhylovska, L.Y.
spellingShingle Freik, D.M.
Pysklynets, U.M.
Mezhylovska, L.Y.
Dominant point defects in doped cadmium telluride CdTe:Ge
Functional Materials
author_facet Freik, D.M.
Pysklynets, U.M.
Mezhylovska, L.Y.
author_sort Freik, D.M.
title Dominant point defects in doped cadmium telluride CdTe:Ge
title_short Dominant point defects in doped cadmium telluride CdTe:Ge
title_full Dominant point defects in doped cadmium telluride CdTe:Ge
title_fullStr Dominant point defects in doped cadmium telluride CdTe:Ge
title_full_unstemmed Dominant point defects in doped cadmium telluride CdTe:Ge
title_sort dominant point defects in doped cadmium telluride cdte:ge
publisher НТК «Інститут монокристалів» НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/136487
citation_txt Dominant point defects in doped cadmium telluride CdTe:Ge / D.M. Freik, U.M. Pysklynets, L.Y. Mezhylovska // Functional Materials. — 2007. — Т. 14, № 2. — С. 181-186. — Бібліогр.: 12 назв. — англ.
series Functional Materials
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AT pysklynetsum dominantpointdefectsindopedcadmiumtelluridecdtege
AT mezhylovskaly dominantpointdefectsindopedcadmiumtelluridecdtege
first_indexed 2023-10-18T21:13:17Z
last_indexed 2023-10-18T21:13:17Z
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