Radiation-induced processes and defects in purified CsI crystals
Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defe...
Збережено в:
Дата: | 2007 |
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Автори: | , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
НТК «Інститут монокристалів» НАН України
2007
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Назва видання: | Functional Materials |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136529 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ. |
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irk-123456789-1365292018-06-17T03:09:56Z Radiation-induced processes and defects in purified CsI crystals Garapyn, I. Pavlyk, B. Tsybulyak, B. Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defects have been found to run in different manners depending on the γ-irradiation dose. Starting from a dose of 10⁵ Gy, the γ-irradiation affects appreciably the defect structure of the purified cesium iodide crystals. 2007 Article Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136529 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
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English |
description |
Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defects have been found to run in different manners depending on the γ-irradiation dose. Starting from a dose of 10⁵ Gy, the γ-irradiation affects appreciably the defect structure of the purified cesium iodide crystals. |
format |
Article |
author |
Garapyn, I. Pavlyk, B. Tsybulyak, B. |
spellingShingle |
Garapyn, I. Pavlyk, B. Tsybulyak, B. Radiation-induced processes and defects in purified CsI crystals Functional Materials |
author_facet |
Garapyn, I. Pavlyk, B. Tsybulyak, B. |
author_sort |
Garapyn, I. |
title |
Radiation-induced processes and defects in purified CsI crystals |
title_short |
Radiation-induced processes and defects in purified CsI crystals |
title_full |
Radiation-induced processes and defects in purified CsI crystals |
title_fullStr |
Radiation-induced processes and defects in purified CsI crystals |
title_full_unstemmed |
Radiation-induced processes and defects in purified CsI crystals |
title_sort |
radiation-induced processes and defects in purified csi crystals |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2007 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/136529 |
citation_txt |
Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT garapyni radiationinducedprocessesanddefectsinpurifiedcsicrystals AT pavlykb radiationinducedprocessesanddefectsinpurifiedcsicrystals AT tsybulyakb radiationinducedprocessesanddefectsinpurifiedcsicrystals |
first_indexed |
2023-10-18T21:13:35Z |
last_indexed |
2023-10-18T21:13:35Z |
_version_ |
1796152248302043136 |