Radiation-induced processes and defects in purified CsI crystals

Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defe...

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Бібліографічні деталі
Видавець:НТК «Інститут монокристалів» НАН України
Дата:2007
Автори: Garapyn, I., Pavlyk, B., Tsybulyak, B.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2007
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/136529
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Цитувати:Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1365292018-06-17T03:09:56Z Radiation-induced processes and defects in purified CsI crystals Garapyn, I. Pavlyk, B. Tsybulyak, B. Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defects have been found to run in different manners depending on the γ-irradiation dose. Starting from a dose of 10⁵ Gy, the γ-irradiation affects appreciably the defect structure of the purified cesium iodide crystals. 2007 Article Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136529 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Defect formation processes under γ-ray irradiation (up to doses of 10⁴-5*10⁶ Gy) in purified Csl crystals have been studied using the electric conductivity measurements, optical absorption spectra and the thermostimulated depolarization currents. The processes of accumulation and destruction of defects have been found to run in different manners depending on the γ-irradiation dose. Starting from a dose of 10⁵ Gy, the γ-irradiation affects appreciably the defect structure of the purified cesium iodide crystals.
format Article
author Garapyn, I.
Pavlyk, B.
Tsybulyak, B.
spellingShingle Garapyn, I.
Pavlyk, B.
Tsybulyak, B.
Radiation-induced processes and defects in purified CsI crystals
Functional Materials
author_facet Garapyn, I.
Pavlyk, B.
Tsybulyak, B.
author_sort Garapyn, I.
title Radiation-induced processes and defects in purified CsI crystals
title_short Radiation-induced processes and defects in purified CsI crystals
title_full Radiation-induced processes and defects in purified CsI crystals
title_fullStr Radiation-induced processes and defects in purified CsI crystals
title_full_unstemmed Radiation-induced processes and defects in purified CsI crystals
title_sort radiation-induced processes and defects in purified csi crystals
publisher НТК «Інститут монокристалів» НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/136529
citation_txt Radiation-induced processes and defects in purified CsI crystals / I. Garapyn, B. Pavlyk, B. Tsybulyak // Functional Materials. — 2007. — Т. 14, № 3. — С. 309-312. — Бібліогр.: 10 назв. — англ.
series Functional Materials
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AT pavlykb radiationinducedprocessesanddefectsinpurifiedcsicrystals
AT tsybulyakb radiationinducedprocessesanddefectsinpurifiedcsicrystals
first_indexed 2023-10-18T21:13:35Z
last_indexed 2023-10-18T21:13:35Z
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