Influence of gas adsorption on the impedance of porous GaAs
Porous GaAs was formed electrochemically on n-type GaAs in a HF:C₂H₅OH (1:3) electrolyte. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). The hodographs of the total impedance and the adsorption influence of ethanol and acetone vapor on the charge transfer...
Збережено в:
| Дата: | 2017 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2017
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136693 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of gas adsorption on the impedance of porous GaAs / Y.S. Milovanov, I.V. Gavrilchenko, S.V. Kondratenko, A.P. Oksanich, S.E. Pritchin, M.G. Kogdas // Functional Materials. — 2017. — Т. 24, № 1. — С. 52-55. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Porous GaAs was formed electrochemically on n-type GaAs in a HF:C₂H₅OH (1:3) electrolyte. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). The hodographs of the total impedance and the adsorption influence of ethanol and acetone vapor on the charge transfer were examined. |
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