Luminescence of Dipole-centers in ZnSe crystals
It is proposed a model of recombination luminescence center on which the two opposite mechanisms of recombination, electron and hole recombination, are implemented. Such a center of luminescence is observed in ZnSe crystals and causes the luminescence of a wide band with the maximum at about 1.92 eV...
Збережено в:
| Дата: | 2017 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2017
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136719 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Luminescence of Dipole-centers in ZnSe crystals / M. Alizadeh, V.Ya. Degoda, B.V. Kozhushko, N.Yu. Pavlova // Functional Materials. — 2017. — Т. 24, № 2. — С. 206-211. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | It is proposed a model of recombination luminescence center on which the two opposite mechanisms of recombination, electron and hole recombination, are implemented. Such a center of luminescence is observed in ZnSe crystals and causes the luminescence of a wide band with the maximum at about 1.92 eV (630 nm). It is performed comparison of some characteristics of this center with the characteristics of the center of luminescence which is a point defect and provides the maximum at of 1.27 eV (970 nm). It is shown that the external electric field and temperature have different impacts on the intensity and spectral positions of the maxima of these bands. |
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