Dependence of electrical conductivity on Bi₂Se₃ thin film thickness
Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed eff...
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| Дата: | 2017 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2017
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136886 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-136886 |
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dspace |
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irk-123456789-1368862018-06-17T03:07:03Z Dependence of electrical conductivity on Bi₂Se₃ thin film thickness Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. Characterization and properties Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data. 2017 Article Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.04.555 http://dspace.nbuv.gov.ua/handle/123456789/136886 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. Dependence of electrical conductivity on Bi₂Se₃ thin film thickness Functional Materials |
| description |
Effect of film thickness d on electrical conductivity σ of n-Bi₂Se₃ thin films (d = 25-420 nm) prepared by thermal evaporation in vacuum onto glass substrates was investigated. It was established that the electrical conductivity increases with increasing of the thin films thickness. The observed effect is explained as a manifestation of the classical size effect connected with diffuse scattering of electrons at the thin film interfaces. The experimental σ(d) dependence is satisfactorily described using the Fuchs-Sondheimer theory for the film thickness d > 60 nm. The specularity parameter and value of electrons mean free path are determined based of the experimental data. |
| format |
Article |
| author |
Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. |
| author_facet |
Menshikova, S.I. Rogacheva, E.I. Sipatov, A.Yu. Fedorov, A.G. |
| author_sort |
Menshikova, S.I. |
| title |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_short |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_full |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_fullStr |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_full_unstemmed |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness |
| title_sort |
dependence of electrical conductivity on bi₂se₃ thin film thickness |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2017 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/136886 |
| citation_txt |
Dependence of electrical conductivity on Bi₂Se₃ thin film thickness / S.I. Menshikova, E.I. Rogacheva, A.Yu. Sipatov, A.G. Fedorov // Functional Materials. — 2017. — Т. 24, № 4. — С. 555-558. — Бібліогр.: 23 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT menshikovasi dependenceofelectricalconductivityonbi2se3thinfilmthickness AT rogachevaei dependenceofelectricalconductivityonbi2se3thinfilmthickness AT sipatovayu dependenceofelectricalconductivityonbi2se3thinfilmthickness AT fedorovag dependenceofelectricalconductivityonbi2se3thinfilmthickness |
| first_indexed |
2023-10-18T21:14:41Z |
| last_indexed |
2023-10-18T21:14:41Z |
| _version_ |
1796152303465529344 |