Effect of growth atmosphere on Ce³⁺ incorporation in Gd₂SiO₅ single crystals

Peculiarities of oxide crystal growth by the Czochralski technique have been discussed in the present paper. A correlation between oxygen content in the growth atmosphere and the Ce³⁺ incorporation coefficient at growing the GSO:Ce crystals has been revealed in experiment. Possible mechanisms of the...

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Бібліографічні деталі
Дата:2007
Автори: Bondar, V.G., Krivoshein, V.I., Martynov, V.P., Nagornaya, L.L., Sideletskiy, O.Ts.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2007
Назва видання:Functional Materials
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/136938
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of growth atmosphere on Ce³⁺ incorporation in Gd₂SiO₅ single crystals / V.G. Bondar, V.I. Krivoshein, V.P. Martynov, L.L. Nagornaya, O.Ts. Sideletskiy // Functional Materials. — 2007. — Т. 14, № 4. — С. 546-549. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:Peculiarities of oxide crystal growth by the Czochralski technique have been discussed in the present paper. A correlation between oxygen content in the growth atmosphere and the Ce³⁺ incorporation coefficient at growing the GSO:Ce crystals has been revealed in experiment. Possible mechanisms of the oxygen concentration influence on the cerium ion incorporation coefficient are discussed. The studies performed have shown an important part played by the growth atmosphere in the growing of oxide crystals with reproducible performance characteristics.