Thermal lag of the growth furnace heating assembly at CsI(Na) crystal growing fron constant melt volume on a seed
Thermal lag of the heater - crucible - crystal system has been determined at a large size CsI(Na) single crystal growing from constant melt volume on a seed. It has been established that during radial growth the temperature stabilization time at the bottom heater power variation is 1.3 times shorter...
Збережено в:
Дата: | 2007 |
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Автори: | , , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
НТК «Інститут монокристалів» НАН України
2007
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Назва видання: | Functional Materials |
Теми: | |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136943 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Thermal lag of the growth furnace heating assembly at CsI(Na) crystal growing fron constant melt volume on a seed / V.I. Goriletsky, V.V. Vasilyev, O.Ts. Sidletskiy, M.M. Tymoshenko, V.I. Sumin // Functional Materials. — 2007. — Т. 14, № 4. — С. 541-545. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | Thermal lag of the heater - crucible - crystal system has been determined at a large size CsI(Na) single crystal growing from constant melt volume on a seed. It has been established that during radial growth the temperature stabilization time at the bottom heater power variation is 1.3 times shorter than that at the size heater power variation. During axial growth, the time difference decreases, drops to 0 at cylinder height about 50 mm, and, then, reverses its sign. |
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