Optimization of the simulation of stress-assisted hydrogen diffusion for studies of hydrogen embrittlement of notched bars

The stress-strain assisted hydrogen diffusion in metals under variable loading is concerned as a key element of elucidation of hydrogen embrittlement (HE). The suitability of simplified treatments of hydrogen diffusion in notched solids under monotonic loading is addressed comparing various 1D and 2...

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Бібліографічні деталі
Видавець:Фізико-механічний інститут ім. Г.В. Карпенка НАН України
Дата:2010
Автори: Toribio, J., Kharin, V., Vergara, D., Lorenzo, M.
Формат: Стаття
Мова:English
Опубліковано: Фізико-механічний інститут ім. Г.В. Карпенка НАН України 2010
Назва видання:Фізико-хімічна механіка матеріалів
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/137179
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Цитувати:Optimization of the simulation of stress-assisted hydrogen diffusion for studies of hydrogen embrittlement of notched bars / J. Toribio, V. Kharin, D. Vergara, M.Lorenzo // Фізико-хімічна механіка матеріалів. — 2010. — Т. 46, № 6. — С. 91-105. — Бібліогр.: 32 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Резюме:The stress-strain assisted hydrogen diffusion in metals under variable loading is concerned as a key element of elucidation of hydrogen embrittlement (HE). The suitability of simplified treatments of hydrogen diffusion in notched solids under monotonic loading is addressed comparing various 1D and 2D modeling approaches with the purpose to assess if generated approximate solutions can provide acceptable results along the diffusion depth towards prospective rupture sites, so that quite more expensive simulations may be eluded. For different geometry-and-loading cases, respective time-depth domains are revealed where certain simplified procedures can be fairly suitable to carry out calculations of metal hydrogenation for the purposes of HE analysis and control, while the choice of the optimum strategy for the stress-strain assisted diffusion simulations in notched members is case- and purpose-dependent.