Integrated detectors of ionizing radiation based on ZnSe(Te)/pZnTe-nCdSe structures

• Дата: 2008
• Автори: Starzhinskiy, N.G., Grinyov, B.V., Gashin, P.A., Focsha, A.A., Galat, A.B., Ryzhikov, V.D., Katrunov, K.A., Zenya, I.M.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2008
• Назва видання: Functional Materials
• Теми: Technology
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/137234
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Integrated detectors of ionizing radiation based on ZnSe(Te)/pZnTe-nCdSe structures / N.G. Starzhinskiy, B.V. Grinyov, P.A. Gashin, A.A. Focsha, A.B. Galat, V.D. Ryzhikov, K.A. Katrunov, I.M. Zenya // Functional Materials. — 2008. — Т. 15, № 1. — С. 115-118. — Бібліогр.: 6 назв. — англ.

A new type of solid state integrated detector of ionizing radiation has been proposed. It has been shown that the properties of ZnSe(Te) crystals make it possible to develop integrated detectors with photoreceivers of a photosensitive heterostructure type arranged directly on the scintillator surface. A preparation method of ZnSe(Te)/pZnTe—nCdSe detectors has been described and the output characteristics thereof have been obtained.