The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals
The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occ...
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| Дата: | 2008 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2008
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| Назва видання: | Functional Materials |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/137245 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1372452018-06-19T03:03:24Z The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. Characterization and properties The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occur in the nanosecond range. The information on the nature and energy structure of the anisotropic impurity centers has been obtained. Two different photogeneration mechanisms of free electrons have been revealed: the direct photoionization of electrons from the ground impurity states and their self-ionization from the excited impurity states which are in resonance with the conduction band. It was found that the photosensitivity region for Cd₁₋ₓHgₓTe:V crystals (x = 0.018) at 300 K is in the range from 0.9 to 1.7 μm. 2008 Article The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/137245 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals Functional Materials |
| description |
The electron trapping and detrapping processes in the semi-insulating CdTe:V crystals have been studied using a new time-resolved photoelectric spectroscopy technique. It has been shown that the electron processes in such crystals involving the impurity centers and intrinsic defects are fast and occur in the nanosecond range. The information on the nature and energy structure of the anisotropic impurity centers has been obtained. Two different photogeneration mechanisms of free electrons have been revealed: the direct photoionization of electrons from the ground impurity states and their self-ionization from the excited impurity states which are in resonance with the conduction band. It was found that the photosensitivity region for Cd₁₋ₓHgₓTe:V crystals (x = 0.018) at 300 K is in the range from 0.9 to 1.7 μm. |
| format |
Article |
| author |
Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. |
| author_facet |
Gnatenko, Yu.P. Bukivskij, P.M. Piryatinski, Yu.P. Faryna, I.O. Furyer, M.S. Gamernyk, R.V. |
| author_sort |
Gnatenko, Yu.P. |
| title |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_short |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_full |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_fullStr |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_full_unstemmed |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals |
| title_sort |
effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes cdte:v and cd₁₋ₓhgₓte:v crystals |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2008 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/137245 |
| citation_txt |
The effect of impurity and intrinsic defects on the energy structure and dynamic of electronic processes CdTe:V and Cd₁₋ₓHgₓTe:V crystals / Yu.P. Gnatenko, P.M. Bukivskij, Yu.P. Piryatinski, I.O. Faryna, M.S. Furyer, R.V. Gamernyk // Functional Materials. — 2008. — Т. 15, № 1. — С. 23-29. — Бібліогр.: 15 назв. — англ. |
| series |
Functional Materials |
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| first_indexed |
2023-10-18T21:15:51Z |
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2023-10-18T21:15:51Z |
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