The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions
The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in ZnₓCd₁₋ₓTe (0x1) and ZnₓHg₁₋ₓTe (x = 0.15) are considered. The temperature...
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| Дата: | 2009 |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2009
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/137730 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions // O.P. Malyk // Functional Materials. — 2009. — Т. 16, № 2. — С. 179-182. — Бібліогр.: 16 назв. — англ. |
Репозитарії
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irk-123456789-1377302018-06-18T03:06:22Z The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions Malyk, O.P. Characterization and properties The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in ZnₓCd₁₋ₓTe (0x1) and ZnₓHg₁₋ₓTe (x = 0.15) are considered. The temperature dependence of the charge carrier mobility in temperature range 50-360 K are calculated. Розглянуто процеси розсіяння носія заряду на близькодіючому потенціалі, викликаному взаємодією з полярним та неполярним оптичними фононами, п'єзоелектричними та акустичними фононами, статичною деформацією, нейтральними та іонізованими домішками в ZnₓCd₁₋ₓTe (0x1) та ZnₓHg₁₋ₓTe (х = 0.15). Розраховано температурні залежності рухливості носія заряду в інтервалі температур 50-360 К. Рассмотрены процессы рассеяния носителя заряда на близко-действующем потенциале, вызванном взаимодействием с полярным и неполярным оптическими фононами, пьезоэлектрическими и акустическими фононами, статической деформацией, нейтральными и ионизированными примесями в ZnₓCd₁₋ₓTe (0x1) и ZnₓHg₁₋ₓTe (х = 0.15). Рассчитаны температурные зависимости подвижности носителя заряда в интервале температур 50-360 К. 2009 Article The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions // O.P. Malyk // Functional Materials. — 2009. — Т. 16, № 2. — С. 179-182. — Бібліогр.: 16 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/137730 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Malyk, O.P. The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions Functional Materials |
| description |
The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in ZnₓCd₁₋ₓTe (0x1) and ZnₓHg₁₋ₓTe (x = 0.15) are considered. The temperature dependence of the charge carrier mobility in temperature range 50-360 K are calculated. |
| format |
Article |
| author |
Malyk, O.P. |
| author_facet |
Malyk, O.P. |
| author_sort |
Malyk, O.P. |
| title |
The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions |
| title_short |
The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions |
| title_full |
The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions |
| title_fullStr |
The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions |
| title_full_unstemmed |
The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions |
| title_sort |
local charge carrier interaction with lattice defects in zncdte and znhgte solid solutions |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2009 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/137730 |
| citation_txt |
The local charge carrier interaction with lattice defects in ZnCdTe and ZnHgTe solid solutions // O.P. Malyk // Functional Materials. — 2009. — Т. 16, № 2. — С. 179-182. — Бібліогр.: 16 назв. — англ. |
| series |
Functional Materials |
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AT malykop thelocalchargecarrierinteractionwithlatticedefectsinzncdteandznhgtesolidsolutions AT malykop localchargecarrierinteractionwithlatticedefectsinzncdteandznhgtesolidsolutions |
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2023-10-18T21:16:15Z |
| last_indexed |
2023-10-18T21:16:15Z |
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1796152376835440640 |