Structural transformation in Zr/Mg multilayer on Si substrate after annealing
A Zr/Mg periodic multilayer was deposited onto silicon substrate by DC magnetron sputtering. Study of the Zr/Mg multilayer structure in an initial state and after thermal annealing in a temperature range of 100...600 °C was made by the X-ray diffraction and cross-section transmission electron micros...
Збережено в:
| Дата: | 2018 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2018
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| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/137877 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural transformation in Zr/Mg multilayer on Si substrate after annealing / L.E. Konotopsky, I.A. Kopilets, S.M. Kosmachev, V.V. Kondratenko // Вопросы атомной науки и техники. — 2018. — № 1. — С. 39-42. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A Zr/Mg periodic multilayer was deposited onto silicon substrate by DC magnetron sputtering. Study of the Zr/Mg multilayer structure in an initial state and after thermal annealing in a temperature range of 100...600 °C was made by the X-ray diffraction and cross-section transmission electron microscopy methods. It was shown that Zr/Mg multilayers are stable up to 400 °C. Further heating to 500 °C leads to decreasing of the number of the operable periods due to the zirconium and magnesium layers interaction with the silicon substrate. Annealing at 550 °C leads to multilayer periodicity destructing. |
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