Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model
Basing on the model before constructed that describes SB of thin semiconductor film included in an electronic circuit, the breakdown time and the localization size are estimated. These estimations are obtained in the frame of the one-dimensional model basing on the parabolic equations maximum princi...
Збережено в:
| Дата: | 2004 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
|
| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138794 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model / Yu.P.Virchenko, A.A.Vodyanitskii // Functional Materials. — 2004. — Т. 11, № 2. — С. 236-240. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-138794 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1387942020-10-09T09:33:30Z Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model Virchenko, Yu.P. Vodyanitskii, Yu.P. Basing on the model before constructed that describes SB of thin semiconductor film included in an electronic circuit, the breakdown time and the localization size are estimated. These estimations are obtained in the frame of the one-dimensional model basing on the parabolic equations maximum principle using some standard solutions with the sharpening. На основе ранее построенной модели, описывающей тепловой пробой тонкой полупроводниковой плёнки, входящей в состав электронной цепи, оценивается время пробоя и размер области локализации. Эти оценки получаются, для одномерной модели, на основе принципа максимума для параболических уравнений посредством сравнения с эталонными обостряющимися решениями. На основі побудованої раніше моделі, яка описує тепловий пробій тонкої напівпровідникової плівки, включеної в електронне коло, оцінено час пробою та розмір області локалізації. Ці оцінки одержано в рамках одновимірної моделі на основі параболічних рівнянь шляхом зіставлення з еталонними рішеннями, які загострюються. 2004 Article Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model / Yu.P.Virchenko, A.A.Vodyanitskii // Functional Materials. — 2004. — Т. 11, № 2. — С. 236-240. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/138794 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Basing on the model before constructed that describes SB of thin semiconductor film included in an electronic circuit, the breakdown time and the localization size are estimated. These estimations are obtained in the frame of the one-dimensional model basing on the parabolic equations maximum principle using some standard solutions with the sharpening. |
| format |
Article |
| author |
Virchenko, Yu.P. Vodyanitskii, Yu.P. |
| spellingShingle |
Virchenko, Yu.P. Vodyanitskii, Yu.P. Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model Functional Materials |
| author_facet |
Virchenko, Yu.P. Vodyanitskii, Yu.P. |
| author_sort |
Virchenko, Yu.P. |
| title |
Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model |
| title_short |
Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model |
| title_full |
Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model |
| title_fullStr |
Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model |
| title_full_unstemmed |
Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model |
| title_sort |
heat localization and formation of secondary breakdown structure in semiconductor materials. iii. analysis of the one-dimensional model |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/138794 |
| citation_txt |
Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model / Yu.P.Virchenko, A.A.Vodyanitskii // Functional Materials. — 2004. — Т. 11, № 2. — С. 236-240. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT virchenkoyup heatlocalizationandformationofsecondarybreakdownstructureinsemiconductormaterialsiiianalysisoftheonedimensionalmodel AT vodyanitskiiyup heatlocalizationandformationofsecondarybreakdownstructureinsemiconductormaterialsiiianalysisoftheonedimensionalmodel |
| first_indexed |
2023-10-18T21:18:08Z |
| last_indexed |
2023-10-18T21:18:08Z |
| _version_ |
1796152450929917952 |