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Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model

Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model

Basing on the model before constructed that describes SB of thin semiconductor film included in an electronic circuit, the breakdown time and the localization size are estimated. These estimations are obtained in the frame of the one-dimensional model basing on the parabolic equations maximum princi...

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Main Authors: Virchenko, Yu.P., Vodyanitskii, Yu.P.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2004
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/138794
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spelling irk-123456789-1387942020-10-09T09:33:30Z Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model Virchenko, Yu.P. Vodyanitskii, Yu.P. Basing on the model before constructed that describes SB of thin semiconductor film included in an electronic circuit, the breakdown time and the localization size are estimated. These estimations are obtained in the frame of the one-dimensional model basing on the parabolic equations maximum principle using some standard solutions with the sharpening. На основе ранее построенной модели, описывающей тепловой пробой тонкой полупроводниковой плёнки, входящей в состав электронной цепи, оценивается время пробоя и размер области локализации. Эти оценки получаются, для одномерной модели, на основе принципа максимума для параболических уравнений посредством сравнения с эталонными обостряющимися решениями. На основі побудованої раніше моделі, яка описує тепловий пробій тонкої напівпровідникової плівки, включеної в електронне коло, оцінено час пробою та розмір області локалізації. Ці оцінки одержано в рамках одновимірної моделі на основі параболічних рівнянь шляхом зіставлення з еталонними рішеннями, які загострюються. 2004 Article Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model / Yu.P.Virchenko, A.A.Vodyanitskii // Functional Materials. — 2004. — Т. 11, № 2. — С. 236-240. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/138794 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Basing on the model before constructed that describes SB of thin semiconductor film included in an electronic circuit, the breakdown time and the localization size are estimated. These estimations are obtained in the frame of the one-dimensional model basing on the parabolic equations maximum principle using some standard solutions with the sharpening.
format Article
author Virchenko, Yu.P.
Vodyanitskii, Yu.P.
spellingShingle Virchenko, Yu.P.
Vodyanitskii, Yu.P.
Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model
Functional Materials
author_facet Virchenko, Yu.P.
Vodyanitskii, Yu.P.
author_sort Virchenko, Yu.P.
title Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model
title_short Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model
title_full Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model
title_fullStr Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model
title_full_unstemmed Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model
title_sort heat localization and formation of secondary breakdown structure in semiconductor materials. iii. analysis of the one-dimensional model
publisher НТК «Інститут монокристалів» НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/138794
citation_txt Heat localization and formation of secondary breakdown structure in semiconductor materials. III. Analysis of the one-dimensional model / Yu.P.Virchenko, A.A.Vodyanitskii // Functional Materials. — 2004. — Т. 11, № 2. — С. 236-240. — англ.
series Functional Materials
work_keys_str_mv AT virchenkoyup heatlocalizationandformationofsecondarybreakdownstructureinsemiconductormaterialsiiianalysisoftheonedimensionalmodel
AT vodyanitskiiyup heatlocalizationandformationofsecondarybreakdownstructureinsemiconductormaterialsiiianalysisoftheonedimensionalmodel
first_indexed 2023-10-18T21:18:08Z
last_indexed 2023-10-18T21:18:08Z
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