Photoelectric memory in 6H-SiC
In the investigated structures, the phenomenon of photoelectric memory is observed connected with the increase of a dark current by about 3 decimal orders and retained for a long time after the structure illumination with light of E = 3 eV energy at T = 300 K. The current-voltage characteristic is I...
Збережено в:
| Дата: | 2004 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138804 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoelectric memory in 6H-SiC / M. Duisenbaev // Functional Materials. — 2004. — Т. 11, № 2. — С. 372-375. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In the investigated structures, the phenomenon of photoelectric memory is observed connected with the increase of a dark current by about 3 decimal orders and retained for a long time after the structure illumination with light of E = 3 eV energy at T = 300 K. The current-voltage characteristic is I ~ Vn, where n = 4.3. Optical and temperature quenching of photoconductivity were observed. Within a narrow range of light intensity, the lux-current characteristic shows a superlinear dependence with к = 4 then passing into a sublinear one with к = 0.7. The observable maximum relaxation time of residual conductivity is т = 5-104 s. Under illumination with light of energy E = 1.1 to 2 eV, the structure exhibits a sharp reduction of т. As the voltage applied to the structure increases, т decreases. |
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