Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures
Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anoma...
Збережено в:
| Дата: | 2004 |
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| Автори: | , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138819 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of dislocations in relaxed MBE SiGe layers on the electrical behavior of Si/SiGe heterostructures / Zs.J. Horvath, L.K. Orlov, N.L. Ivina, E.S. Demidov, V.I. Vdovin , M. Adam, I. Szabo, L. Dozsa, E.M. Pashaev, Yu.M. Ivanov, S.N. Yakunin // Functional Materials. — 2004. — Т. 11, № 2. — С. 381-385. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Defects in Si/SiGe heterostructures and electrical behavior thereof have been studied. Misfit dislocations were observed in the epitaxial layers using cross-sectional transmission electron microscopy. These defects cause anomalies in the electrical behavior. It has been shown that, in spite of anomalies, the electrical measurements provide useful and reliable information on the structures. |
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