Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar+CO atmosphere

• Date: 2004
• Main Authors: Dan‘ko, A.Ya., Tkachenko, V.F., Sidelnikova, N.S., Puzikov, V.M., Nizhankovskiy, S.V.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2004
• Series: Functional Materials
• Online Access: http://dspace.nbuv.gov.ua/handle/123456789/138844
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Peculiarities of optical and structure characteristics of sapphire single crystals grown in Ar+CO atmosphere / A.Ya. Dan’ko, V.F. Tkachenko, N.S. Sidelnikova, V.M. Puzikov, S.V. Nizhankovskiy // Functional Materials. — 2004. — Т. 11, № 2. — С. 251-257. — Бібліогр.: 8 назв. — англ.

Presented are the results of optical and X-ray structure investigations of sapphire crystals grown by the method of HOC in the protective (reducing) medium Ar+CO under a pressure of 10...800 torr. The dependence of the crystals structure perfection on the pressure of the medium is established. It is shown that high-temperature annealing may raise the structure perfection up to the level characteristic of the crystals grown under the conditions of high vacuum (10⁻⁴ torr). Correlation of the parameters which characterize the structure perfection, with the concentration of anionic vacancies in the crystals, allows to assume that at the growth of sapphire crystals in reducing media, vacancy mechanism may play a noticeable role in the process of formation of dislocations and low-angle dislocation boundaries.