Structure changes in C₆₀-Bi composite films irradiated by accelerated electron beam
The structure of unsupported epitaxial films of С₆₀-Bi composite with hcp lattice has been studied after irradiation by 100 keV electron beam in the electron microscope column. А short-time irradiation of the film by electrons at the average current density of 40 А/cm² results in the composite evapo...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
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| Дата: | 2005 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138867 |
| Теги: |
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| Цитувати: | Structure changes in C₆₀-Bi composite films irradiated by accelerated electron beam / A.S. Vus, B.A. Savitsky, E.N. Zubarev, M.V. Moskalets // Functional Materials. — 2005. — Т. 12, № 3. — С. 536-538. — Бібліогр.: 6 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The structure of unsupported epitaxial films of С₆₀-Bi composite with hcp lattice has been studied after irradiation by 100 keV electron beam in the electron microscope column. А short-time irradiation of the film by electrons at the average current density of 40 А/cm² results in the composite evaporation in the beam central area. In the film boundary region, pores are formed of dimensions well correlated with the nanodimensional areas of the segregated bismuth. The electron bombardment results in reduced interplanar spacings depending on the plane system index and the irradiation intensity. А qualitative mechanism of pore formation has been proposed. |
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