Doped sillenite crystals
AI, Ga, Cг, Mn, V, Cu, Mо, Fe, Sn doped Bi₁₂SiO₂₀ crystals and pure Bi₁₂SiO₂₀ crystals with varying concentration of non-stoichiometric defects have been grown. The localization of the doping ions in the crystal lattice have been determined and the distribution coefficients thereof have been calcula...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138887 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Doped sillenite crystals / T.V. Panchenko, N.A. Truseeva, K.Yu.Strelets // Functional Materials. — 2005. — Т. 12, № 4. — С. 707-713. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | AI, Ga, Cг, Mn, V, Cu, Mо, Fe, Sn doped Bi₁₂SiO₂₀ crystals and pure Bi₁₂SiO₂₀ crystals with varying concentration of non-stoichiometric defects have been grown. The localization of the doping ions in the crystal lattice have been determined and the distribution coefficients thereof have been calculated within the frame of isomorphism theory considering the energy of preference to the octahedron oxygen surrounding. The means to improve the optical quality of the pure and doped Bi₁₂SiO₂₀ crystals have been proposed, the photochromic properties thereof have been investigated. |
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