The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment
The experimental magnetic treatment conditions of silicon crystals in a weak (B = 0.17 T) magnetic field which provide a long-term stability of magnetomechanical effect (MME) have been investigated. It is established that at long-term and cyclic magnetic processing, the MME relaxation is slowed down...
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Дата: | 2009 |
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Формат: | Стаття |
Мова: | English |
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НТК «Інститут монокристалів» НАН України
2009
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Назва видання: | Functional Materials |
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Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138902 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment // V.A. Makara, L.P. Steblenko, A.M. Kuryliuk, Iu.L. Kobzar, S.M. Naumenko, A.M. Krit, V.M. Kravchenko // Functional Materials. — 2009. — Т. 16, № 3. — С. 237-240. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1389022018-06-20T03:05:41Z The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment Makara, V.A. Steblenko, L.P. Kuryliuk, A.M. Kobzar, Iu.L. Naumenko, S.M. Krit, A.M. Kravchenko, V.M. Characterization and properties The experimental magnetic treatment conditions of silicon crystals in a weak (B = 0.17 T) magnetic field which provide a long-term stability of magnetomechanical effect (MME) have been investigated. It is established that at long-term and cyclic magnetic processing, the MME relaxation is slowed down. The correlation character between the magnetic processing duration of investigated samples and MME relaxation time is established to be linear. A possible reason of MME prolongation at long-term and cyclic magnetic processing is absorption processes and interdefect reactions on the magneticfield- activated silicon surface. Досліджено експериментальні режими магнітної обробки кристалів кремнію у слабкому (В = 0,17 Тл) магнітному полі, які забезпечують тривалу стабільність магнітомеханічного ефекту (ММЕ). Виявлено, що при тривалій та циклічній магнітній обробці релаксація ММЕ сповільнюється. Встановлено лінійний характер зв'язку між часом магнітної обробки, що досліджуються, зразків і часом релаксації ММЕ. Імовірною причиною пролонгації ММЕ при тривалій і циклічній магнітній обробці є адсорбційні процеси та міждефектні реакції на магнітоактивованій поверхні кремнію. Исследованы экспериментальные режимы магнитной обработки кристаллов кремния в слабом (В = 0,17 Тл) магнитном поле, которые обеспечивают длительную стабильность магнитомеханического эффекта (ММЭ). Обнаружено, что при длительной и циклической магнитной обработке релаксация ММЭ замедляется. Установлен линейный характер связи между временем магнитной обработки исследуемых образцов и временем релаксации ММЭ. Вероятной причиной пролонгации ММЭ при длительной и циклической магнитной обработке являются адсорбционные процессы и междефектные реакции на магнитоактивированной поверхности кремния. 2009 Article The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment // V.A. Makara, L.P. Steblenko, A.M. Kuryliuk, Iu.L. Kobzar, S.M. Naumenko, A.M. Krit, V.M. Kravchenko // Functional Materials. — 2009. — Т. 16, № 3. — С. 237-240. — Бібліогр.: 9 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/138902 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
topic |
Characterization and properties Characterization and properties |
spellingShingle |
Characterization and properties Characterization and properties Makara, V.A. Steblenko, L.P. Kuryliuk, A.M. Kobzar, Iu.L. Naumenko, S.M. Krit, A.M. Kravchenko, V.M. The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment Functional Materials |
description |
The experimental magnetic treatment conditions of silicon crystals in a weak (B = 0.17 T) magnetic field which provide a long-term stability of magnetomechanical effect (MME) have been investigated. It is established that at long-term and cyclic magnetic processing, the MME relaxation is slowed down. The correlation character between the magnetic processing duration of investigated samples and MME relaxation time is established to be linear. A possible reason of MME prolongation at long-term and cyclic magnetic processing is absorption processes and interdefect reactions on the magneticfield- activated silicon surface. |
format |
Article |
author |
Makara, V.A. Steblenko, L.P. Kuryliuk, A.M. Kobzar, Iu.L. Naumenko, S.M. Krit, A.M. Kravchenko, V.M. |
author_facet |
Makara, V.A. Steblenko, L.P. Kuryliuk, A.M. Kobzar, Iu.L. Naumenko, S.M. Krit, A.M. Kravchenko, V.M. |
author_sort |
Makara, V.A. |
title |
The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment |
title_short |
The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment |
title_full |
The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment |
title_fullStr |
The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment |
title_full_unstemmed |
The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment |
title_sort |
relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2009 |
topic_facet |
Characterization and properties |
url |
http://dspace.nbuv.gov.ua/handle/123456789/138902 |
citation_txt |
The relaxation of magnetomechanical effect in silicon crystals under cyclic magnetic treatment // V.A. Makara, L.P. Steblenko, A.M. Kuryliuk, Iu.L. Kobzar, S.M. Naumenko, A.M. Krit, V.M. Kravchenko // Functional Materials. — 2009. — Т. 16, № 3. — С. 237-240. — Бібліогр.: 9 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
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first_indexed |
2023-10-18T21:18:09Z |
last_indexed |
2023-10-18T21:18:09Z |
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