Influence of γ-irradiation on current-voltage characteristics of TIGaSe₂ single crystal
Injection currents are studied in high-resistive TIGaSe₂ single crystals prior to and after γ-irradiation (with dose Dγ = 50 and 100 kR) and the electrical parameters have been determined. Before irradiation, the concentration of traps Nt = 2.7·10¹⁰ cm⁻³, equilibrium concentration of charge carriers...
Збережено в:
| Дата: | 2009 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2009
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138940 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of γ-irradiation on current-voltage characteristics of TIGaSe₂ single crystal // A.A. Ismailov, N.D. Achmedzade, M.M. Shirinov, S.T. Aghalieva // Functional Materials. — 2009. — Т. 16, № 4. — С. 481-482. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Injection currents are studied in high-resistive TIGaSe₂ single crystals prior to and after γ-irradiation (with dose Dγ = 50 and 100 kR) and the electrical parameters have been determined. Before irradiation, the concentration of traps Nt = 2.7·10¹⁰ cm⁻³, equilibrium concentration of charge carriers P₀ = 3·10⁹ cm⁻³, the depth of trap level responsible for the injection current Et= 2.6·10⁻² eV. For crystals irradiated at Dγ= 50 kR: Nt = 1·10¹¹ cm⁻³, P₀ = 2·10⁸ cm⁻³, Et= 2.6·10⁻² eV; after irradiation at Dγ= 100 kR, Nt = 5.4·10¹⁰ cm⁻³, P₀ = 5·10⁹ cm⁻³, Et= 2.6·10⁻² eV. |
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