Influence of γ-irradiation on current-voltage characteristics of TIGaSe₂ single crystal

• Дата: 2009
• Автори: Ismailov, A.A., Achmedzade, N.D., Shirinov, M.M., Aghalieva, S.T.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2009
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/138940
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of γ-irradiation on current-voltage characteristics of TIGaSe₂ single crystal // A.A. Ismailov, N.D. Achmedzade, M.M. Shirinov, S.T. Aghalieva // Functional Materials. — 2009. — Т. 16, № 4. — С. 481-482. — Бібліогр.: 4 назв. — англ.

Injection currents are studied in high-resistive TIGaSe₂ single crystals prior to and after γ-irradiation (with dose Dγ = 50 and 100 kR) and the electrical parameters have been determined. Before irradiation, the concentration of traps Nt = 2.7·10¹⁰ cm⁻³, equilibrium concentration of charge carriers...