Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique
The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138949 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been developed and the crystals up to 18 mm in diameter have been grown. The influence of annealing on the crack formation in Gaₓln₁-ₓSb single crystals after cutting thereof has been studied. The crystal annealing at 170℃ for 10-12 h has been found to reduce the number of cracks longer than 0.2 mm. |
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