Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique
The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been...
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| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/138949 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ. |
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irk-123456789-1389492018-06-20T03:11:09Z Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique Kozhemyakin, G.N. Ruban, R.V. The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been developed and the crystals up to 18 mm in diameter have been grown. The influence of annealing on the crack formation in Gaₓln₁-ₓSb single crystals after cutting thereof has been studied. The crystal annealing at 170℃ for 10-12 h has been found to reduce the number of cracks longer than 0.2 mm. Определены эффективные коэффициенты распределения Ga согласно модели Острогорского-Мюллера с учетом экспериментальных данных для составов кристаллов Gaₓln₁-ₓSb с содержанием Ga до 0,2. Разработан метод выращивания по Чохральскому, выращены монокристаллы Gaₓln₁-ₓSb диаметром до 18 мм. Изучено влияние отжига на образование трещин после разрезания монокристаллов Gaₓln₁-ₓSb. Показано, что отжиг кристаллов при температуре 170℃ в течение 10-12 часов уменьшает количество трещин длиной более 0,2 мм. Визначено ефективнi коефiцiєнти розподiлу Ga згiдно моделi Острогорського-Мюллера з урахуванням експериментальних даних для складiв кристалiв Gaₓln₁-ₓSb iз вмiстом Ga до 0,2. Розроблено метод вирощування за Чохральським, вирощено монокристали Gaₓln₁-ₓSb дiаметром до 18 мм. Вивчено вплив вiдпалу на утворення трiщин пiсля розрiзання монокристалiв Gaₓln₁-ₓSb. Показано, що вiдпал кристалiв при температурi 170℃ протягом 10-12 годин поменшує кiлькiсть трiщин довжиною бiльш нiж 0,2 мм. 2005 Article Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/138949 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been developed and the crystals up to 18 mm in diameter have been grown. The influence of annealing on the crack formation in Gaₓln₁-ₓSb single crystals after cutting thereof has been studied. The crystal annealing at 170℃ for 10-12 h has been found to reduce the number of cracks longer than 0.2 mm. |
| format |
Article |
| author |
Kozhemyakin, G.N. Ruban, R.V. |
| spellingShingle |
Kozhemyakin, G.N. Ruban, R.V. Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique Functional Materials |
| author_facet |
Kozhemyakin, G.N. Ruban, R.V. |
| author_sort |
Kozhemyakin, G.N. |
| title |
Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique |
| title_short |
Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique |
| title_full |
Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique |
| title_fullStr |
Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique |
| title_full_unstemmed |
Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique |
| title_sort |
growing of gaₓin₁-ₓsb single crystals by czochralski technique |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/138949 |
| citation_txt |
Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ. |
| series |
Functional Materials |
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AT kozhemyakingn growingofgaxin1xsbsinglecrystalsbyczochralskitechnique AT rubanrv growingofgaxin1xsbsinglecrystalsbyczochralskitechnique |
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2023-10-18T21:19:40Z |
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2023-10-18T21:19:40Z |
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1796152518683656192 |