Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique
The effective distribution coefficients for Ga in Gaₓln₁-ₓSb single crystals (х ≤ 0.2) have been calculated according the Ostrogorsky-Mueller model taking into account the experimental data. The growing procedure of Gaₓln₁-ₓSb single crystals using the Czochralski technique has been...
Gespeichert in:
| Datum: | 2005 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
|
| Schriftenreihe: | Functional Materials |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/138949 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Growing of GaₓIn₁-ₓSb single crystals by Czochralski technique / G.N. Kozhemyakin, R.V. Ruban // Functional Materials. — 2005. — Т. 12, № 4. — С. 762-764. — Бібліогр.: 5 назв. — англ. |