Photostimulated Ga diffusion in zinc sulfide
Effect of coherent illumination (using LGI-23 and LGN-222 lasers) of ZnS powders during thermal annealing on zinc sulfide structure properties and on Ga diffusion in ZnS has been studied using photoluminescence method. The photostimulated Ga diffusion in ZnS is shown to be more efficient when the ma...
Збережено в:
| Дата: | 2004 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139301 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photostimulated Ga diffusion in zinc sulfide / Yu.Yu. Bacherikov, S.V. Optasyuk, V.E. Rodionov, A.A. Stadnik // Functional Materials. — 2004. — Т. 11, № 2. — С. 347-349. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Effect of coherent illumination (using LGI-23 and LGN-222 lasers) of ZnS powders during thermal annealing on zinc sulfide structure properties and on Ga diffusion in ZnS has been studied using photoluminescence method. The photostimulated Ga diffusion in ZnS is shown to be more efficient when the material is illuminated at λ = 632.8 nm as compared to the UV illumination. Illumination by He-Ne laser during the annealing results in appearance of a band at λmax = 470 nm in the photoluminescence spectrum as well as in an afterglow (10 s). |
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