Self-organization in semiconductors with drift instability under influence of modulated light. II. Light response to external field variations

• Дата: 2005
• Автори: Chupyra, S.M., Horley, P.P., Gorley, P.M.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2005
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/139308
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Self-organization in semiconductors with drift instability under influence of modulated light. II. Light response to external field variations / S.M. Chupyra, P.P. Horley, P.M. Gorley // Functional Materials. — 2005. — Т. 12, № 4. — С. 786-792. — Бібліогр.: 6 назв. — англ.

The spectral dependence of photo-response for a finite size semiconductor under Gunn effect has been theoretically studied. А correlation has been established between the voltage variations across a sample and current and illumination time-harmonic variations. The problem of the light response frequency dispersion, in particular, in the voltage and current generation modes has been considered. The light response spectral dependences have been shown to be substantially different in voltage and current generation modes. For a semiconductor with n-GaAs parameters show that the above dependences for long and short samples are different in character. This fact is supposed to be caused by an area of spatially inhomogeneous distribution of volume charge appearing under illumination, that area contributing to different extent to the integral characteristic, depending on the sample length.