Influence of ultrasound on the growth striations in GaₓIn₁₋ₓSb single crystals

The results of investigation experiments of the growth striations in GaₓIn₁₋ₓSb single crystals with х=0.03 grown by Czochralski method with ultrasound field at a frequency of 1.44 MHz have been presented. It was noted that ultrasound eliminate the growth striations generated by the convection in t...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2005
Автори: Zolkina, L.V., Kozhemyakin, G.N.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2005
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/139309
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of ultrasound on the growth striations in GaₓIn₁₋ₓSb single crystals / L.V. Zolkina, G.N. Kozhemyakin // Functional Materials. — 2005. — Т. 12, № 4. — С. 714-718. — Бібліогр.: 14 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:The results of investigation experiments of the growth striations in GaₓIn₁₋ₓSb single crystals with х=0.03 grown by Czochralski method with ultrasound field at a frequency of 1.44 MHz have been presented. It was noted that ultrasound eliminate the growth striations generated by the convection in the melt in the central part of the crystals and at the crystals periphery. The experimental results have been confirmed by the modeling experiments of the convection in the liquid phase in the conditions similar to growth conditions of Ga₀.₀₃ln₀.₉₇Sb single crystals.