Peculiarities of Si-Ge whisker growing by CTR method
Growth peculiarities of doped Si₁₋ₓGeₓ (х = 0.01-0.05) solid solution whiskers of 1 to 100 µm in diameter in closed bromide system by chemical transport reactions method have been investigated. А dimensional dependence of specific resistance at 300 К has been revealed. The Si₁₋ₓGeₓ (х = 0.05) whisk...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139317 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of Si-Ge whisker growing by CTR method / A.A. Druzhinin, I.P. Ostrovskii, Yu.M. Khoverko, Ya.V. Gij // Functional Materials. — 2005. — Т. 12, № 4. — С. 738-741. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Growth peculiarities of doped Si₁₋ₓGeₓ (х = 0.01-0.05) solid solution whiskers of 1 to 100 µm in diameter in closed bromide system by chemical transport reactions method have been investigated. А dimensional dependence of specific resistance at 300 К has been revealed. The Si₁₋ₓGeₓ (х = 0.05) whiskers of 30 to 70 µm in diameter with dopant concentration in the vicinity of metal-insulator transition were obtained. Substantial changes of the specific resistance and gauge factor of the crystals depending on their diameters has been observed in temperature range 4.2-50 К. |
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