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Peculiarities of Si-Ge whisker growing by CTR method
Growth peculiarities of doped Si₁₋ₓGeₓ (х = 0.01-0.05) solid solution whiskers of 1 to 100 µm in diameter in closed bromide system by chemical transport reactions method have been investigated. А dimensional dependence of specific resistance at 300 К has been revealed. The Si₁₋ₓGeₓ (х = 0.05) whisk...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2005
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| Series: | Functional Materials |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/139317 |
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| Summary: | Growth peculiarities of doped Si₁₋ₓGeₓ (х = 0.01-0.05) solid solution whiskers of 1 to 100 µm in diameter in closed bromide system by chemical transport reactions method have been investigated. А dimensional dependence of specific resistance at 300 К has been revealed. The Si₁₋ₓGeₓ (х = 0.05) whiskers of 30 to 70 µm in diameter with dopant concentration in the vicinity of metal-insulator transition were obtained. Substantial changes of the specific resistance and gauge factor of the crystals depending on their diameters has been observed in temperature range 4.2-50 К. |
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