Studies of photoactive states of isovalently doped ZnSe crystals by the method of scanning photodielectric spectroscopy

• Дата: 2004
• Автори: Ryzhikov, V., Starzhinskiy, N., Chujai, O., Migal, V., Komar, V., Katrunov, K., Oleinik, S., Zenya, I.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2004
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/139475
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Studies of photoactive states of isovalently doped ZnSe crystals by the method of scanning photodielectric spectroscopy / V. Ryzhikov, N.Starzhinskiy, O. Chujai, V. Migal’, V. Komar’, K. Katrunov, S. Oleinik, I. Zenya // Functional Materials. — 2004. — Т. 11, № 3. — С. 563-566. — Бібліогр.: 6 назв. — англ.

Using methods of photodielectric spectroscopy, studies have been carried out of the energy level structure of the defect complexes in isovalently doped zinc selenide crystals. On variation of light wavelength (λ), small changes in effective values of the real λ' and imaginary є'' parts of complex dielectric permittivity were measured in the low frequency (1-50 kHz) region using a high sensitivity AC bridge. Different configurations were used of electric and light fields in the crystals. The local energy level spectrum was determined from ε′(λ)-ε′′(λ) diagrams presented in the complex plane. Analysis has been carried out of relationship between characteristic features of these diagrams and parameters of photoactive states of different nature. Effects are discussed of the surface potential and band bending upon energetics of the local states.