Thermostimulated luminescence spectra of InxTl₁-xI nanostructures synthesized in porous silicon
The dose dependence of integral intensity of thermostimulated luminescence spectra of InxTl₁-xI nanostructures synthesized in porous silicon voids and exposed to hard y-radiation has been investigated. The mechanisms of recombination processes and the practical application possibility of the structu...
Збережено в:
| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139558 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thermostimulated luminescence spectra of InxTl₁-xI nanostructures synthesized in porous silicon / A.V. Franiv, O.V. Bovgyra, O.V. Savchyn // Functional Materials. — 2004. — Т. 11, № 4. — С. 742-745. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The dose dependence of integral intensity of thermostimulated luminescence spectra of InxTl₁-xI nanostructures synthesized in porous silicon voids and exposed to hard y-radiation has been investigated. The mechanisms of recombination processes and the practical application possibility of the structures obtained as detectors of radioactive irradiation have been discussed. |
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