Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals
Experiments on local high-intensity electric current pulse action on mechanical properties of a Si filamentary crystal made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations.
Збережено в:
| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139568 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals / A.P. Ermakov, B.M. Darinsky, A.I. Drozhzhin // Functional Materials. — 2004. — Т. 11, № 4. — С. 746-750. — Бібліогр.: 15 назв. — англ. |
Репозитарії
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irk-123456789-1395682018-06-21T03:06:11Z Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals Ermakov, A.P. Darinsky, B.M. Drozhzhin, A.I. Experiments on local high-intensity electric current pulse action on mechanical properties of a Si filamentary crystal made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations. Эксперименты по локальному высокоинтенсивному воздействию импульсом электрического тока на механические свойства нитевидных кристаллов Si позволили обнаружить новую разновидность электропластического эффекта, связанного с зарождением дислокаций. Експерименти з локального високоінтєнсивного впливу імпульсом електричного струму на механічні властивості ниткоподібного кристалу кремнію дозволили виявити новий різновид електропластичного ефекту, пов’язаного з зародженням дислокацій. 2004 Article Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals / A.P. Ermakov, B.M. Darinsky, A.I. Drozhzhin // Functional Materials. — 2004. — Т. 11, № 4. — С. 746-750. — Бібліогр.: 15 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/139568 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Experiments on local high-intensity electric current pulse action on mechanical properties of a Si filamentary crystal made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations. |
| format |
Article |
| author |
Ermakov, A.P. Darinsky, B.M. Drozhzhin, A.I. |
| spellingShingle |
Ermakov, A.P. Darinsky, B.M. Drozhzhin, A.I. Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals Functional Materials |
| author_facet |
Ermakov, A.P. Darinsky, B.M. Drozhzhin, A.I. |
| author_sort |
Ermakov, A.P. |
| title |
Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals |
| title_short |
Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals |
| title_full |
Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals |
| title_fullStr |
Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals |
| title_full_unstemmed |
Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals |
| title_sort |
electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/139568 |
| citation_txt |
Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals / A.P. Ermakov, B.M. Darinsky, A.I. Drozhzhin // Functional Materials. — 2004. — Т. 11, № 4. — С. 746-750. — Бібліогр.: 15 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT ermakovap electroplasticeffectassociatedwiththedislocationgenerationintheinitiallydislocationfreesiliconfilamentarycrystals AT darinskybm electroplasticeffectassociatedwiththedislocationgenerationintheinitiallydislocationfreesiliconfilamentarycrystals AT drozhzhinai electroplasticeffectassociatedwiththedislocationgenerationintheinitiallydislocationfreesiliconfilamentarycrystals |
| first_indexed |
2023-10-18T21:20:45Z |
| last_indexed |
2023-10-18T21:20:45Z |
| _version_ |
1796152567437197312 |