Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals

• Дата: 2004
• Автори: Ermakov, A.P., Darinsky, B.M., Drozhzhin, A.I.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2004
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/139568
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon filamentary crystals / A.P. Ermakov, B.M. Darinsky, A.I. Drozhzhin // Functional Materials. — 2004. — Т. 11, № 4. — С. 746-750. — Бібліогр.: 15 назв. — англ.

Experiments on local high-intensity electric current pulse action on mechanical properties of a Si filamentary crystal made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations.