Thermoelastic interactions in Al-n-Si-Ni structures at pulse laser irradiation
Using the scanning electron microscopy and optical metallography, the formation and redistribution of structural defects in the near-contact silicon layer of thermally untreated Al-n-Si structures resulting from thermoelastic stresses developed under pulse laser irradiation have been investigated ex...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
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| Дата: | 2005 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139698 |
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| Цитувати: | Thermoelastic interactions in Al-n-Si-Ni structures at pulse laser irradiation / G.I. Vorobets, M.M. Vorobets, A.P. Fedorenko // Functional Materials. — 2005. — Т. 12, № 1. — С. 107-113. — Бібліогр.: 10 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Using the scanning electron microscopy and optical metallography, the formation and redistribution of structural defects in the near-contact silicon layer of thermally untreated Al-n-Si structures resulting from thermoelastic stresses developed under pulse laser irradiation have been investigated experimentally. A structurized transition layer has been found to be formed at the metal/semiconductor interface at relaxation of elastic stresses in the metal layer. To explain the behavior features of the defect systems at the periphery of Schottky diodes under irradiation of Al-n-Si structures through a silicon optical window, a physical model of the laser radiation effect on the metal/semiconductor contact has been proposed taking into account temperature dependence of the radiation absorption coefficient in the semiconductor. |
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