Investigation of the growth mechanism, structure, and thermoelectric properties of thin PbTe films grown on mica

• Дата: 2005
• Автори: Rogacheva, E.I., Grigorov, S.N., Lyubchenko, S.G., Sipatov, A.Yu., Volobuev, V.V., Dresselhaus, M.S.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2005
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/139733
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Investigation of the growth mechanism, structure, and thermoelectric properties of thin PbTe films grown on mica / E.I. Rogacheva, S.N. Grigorov, S.G. Lyubchenko, A.Yu. Sipatov, V.V. Volobuev, M.S. Dresselhaus // Functional Materials. — 2005. — Т. 12, № 1. — С. 21-27. — Бібліогр.: 22 назв. — англ.

The growth mechanisms, structure and thermoelectric properties of thin PbTe films prepared by thermal evaporation in vacuum and subsequent deposition on mica substrates at temperatures Ts = 375, 525 and 635 К were studied. The films were prepared from charge with different electron concentrations (n = 10¹⁷ and n = 10²⁰ cm⁻³). The film thickness was varied in the range d =4-500 nm. Electron microscopy study showed that PbTe grows on mica epitaxially in an island like fashion predominantly in the (111) orientation. It is established that in PbTe films there exists a critical thickness at which the transition from electron to hole conductivity with decreasing d is observed. Covering films with a protective layer, lowering the substrate temperature and increasing electron concentration in the charge result in narrowing of the thickness range corresponding to hole conductivity. It is shown that electron concentrations n in the charge and in thick PbTe films grown at the substrate temperature Ts = 525 К differ, the character and magnitude of this difference depending on n in the charge.