Structure factor of the gas sensitivity improvement of bilayer tin dioxide films
Comparative studies of electric conductivity and gas sensitivity have been carried out for two types of tin dioxide films (single- and bilayer ones). The free surface area of the bilayer films was increased intentionally by applying the second layer as a thin nanodis-persed tin dioxide layer with a...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
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| Дата: | 2005 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/139970 |
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| Цитувати: | Structure factor of the gas sensitivity improvement of bilayer tin dioxide films / P.A. Panchekha, V.A. Novikov // Functional Materials. — 2005. — Т. 12, № 1. — С. 17-20. — Бібліогр.: 5 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Comparative studies of electric conductivity and gas sensitivity have been carried out for two types of tin dioxide films (single- and bilayer ones). The free surface area of the bilayer films was increased intentionally by applying the second layer as a thin nanodis-persed tin dioxide layer with a developed relief. The gas sensitivity of the bilayer films has been shown to exceed by 2 to 4 times that of the single-layer ones at the same thickness. This and others features of the bilayer films have been explained by the improved adsorbing ability thereof and, consequently, by a stronger depletion of free charge carriers in the layer at oxygen adsorption. |
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