Photoinduced phenomena in thin-film Cu-PbI₂ and Cu-PbI₂-chalkogenide glassy semiconductor systems

• Дата: 2006
• Автори: Mussil, V.V., Lemeshevskaya, E.T., Pilipenko, V.V.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2006
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/140071
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Photoinduced phenomena in thin-film Cu-PbI₂ and Cu-PbI₂-chalkogenide glassy semiconductor systems / V.V. Mussil, E.T. Lemeshevskaya, V.V. Pilipenko // Functional Materials. — 2006. — Т. 13, № 2. — С. 214-218. — Бібліогр.: 18 назв. — англ.

Results of photoinduced processes study in two-layer Сu-РbI₂ and three-layer Сu-РbI₂- chalkogenide glassy semiconductor (Ge-As-S) systems are presented. Reversible changes of optical transmittance in Сu-РbI₂-Ge-As-S systems under consecutive irradiation with different wavelength light (442 and 633 nm) have been found. It has been established that irradiation of the systems with linearly polarized weakly absorbed light results in formation of periodic diffraction structures. The phenomena observed have been considered taking into account the Сu photodiffusion processes, formation and degradation of small metallic particles in the РbI₂ layer and the light waveguide propagation in the film systems.