Physical mechanisms of microstructure formation in niobium films under low temperature ionic-atomic deposition

• Дата: 2006
• Автори: Marchenko, I.G., Neklyudov, I.M.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2006
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/140074
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Physical mechanisms of microstructure formation in niobium films under low temperature ionic-atomic deposition / I.G. Marchenko, I.M. Neklyudov // Functional Materials. — 2006. — Т. 13, № 2. — С. 227-233. — Бібліогр.: 33 назв. — англ.

The molecular dynamics method has been used to study the effect of low-energy irradiation with self-ions on the microstructure and residual stresses arising in niobium films in the course of ion-atomic deposition. The ion flow constituted 10 % of the total atomic flow being deposited, the ion energy was 200 eV. After thermal deposition of the film at 300 К up to the thickness at which the steady-state density is attained, the ionic-atomic deposition of the film was performed. The growing film density was increased under ion action. This increase has been shown to be caused mainly by the film smoothing under ion bombardment that results in decreasing number of "micro-cracks" below which the pores are localized. The investigation results show that the ion action changes the character of internal microstresses. This is related with formation of interstitial atom clusters. A correlation has been found between the density of films formed, their microstructure and arising microstresses.