Radiation modification of the structure of layer crystals of sulfide gallium

• Дата: 2018
• Автори: Madatov, R.S., Gadzhieva, N.N., Asadov, F.G., Asadova, Z.I.
• Формат: Стаття
• Мова: English
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2018
• Назва видання: Вопросы атомной науки и техники
• Теми: Физика радиационных и ионно-плазменных технологий
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/147670
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Radiation modification of the structure of layer crystals of sulfide gallium / .S. Madatov, N.N. Gadzhieva, F.G. Asadov, Z.I. Asadova // Вопросы атомной науки и техники. — 2018. — № 5. — С. 116-120. — Бібліогр.: 17 назв. — англ.

he radiation modification of the structure of a layered GaS crystal by the Fourier-IR and Raman spectroscopy methods in the absorbed dose (Фγ = 30…200 krad) of gamma-irradiation was studied. It was established that at irradiation doses of Фγ ≤ 50 krad a half-width and intensities Raman lines and IR adsorption bands the characterizing the layer oscillations does not change, which is due to the stability of the crystal lattice. At absorbed doses of Фγ ≥ 50 krad, changes in these parameters are observed, which lead to a change in the degree of structural disorder and, consequently, of the radiation structural modification of the layered crystal. Fourier-IR reflection spectra revealed that gamma-irradiation at doses of Фγ ≥ 50 krad leads to a deterioration of the surface state of gallium sulphide.