Electron-acoustic phonon field induced tunnel scattering
Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the tilting of semiconductor bands by the perturbing potential of an...
Збережено в:
| Видавець: | Інститут фізики конденсованих систем НАН України |
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| Дата: | 2015 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2015
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/153584 |
| Теги: |
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| Цитувати: | Electron-acoustic phonon field induced tunnel scattering / S.V. Melkonyan, A.L. Harutyunyan, T.A. Zalinyan // Condensed Matter Physics. — 2015. — Т. 18, № 2. — С. 23702: 1–12. — Бібліогр.: 10 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the tilting of semiconductor bands by the perturbing potential of an electric field. In this case, electron eigenfunctions are not plane waves or Bloch functions. In low-field regime, the expressions for electron intraband transition probability and scattering time are obtained under elastic collision approximation. Dependencies of scattering time on electron energy and uniform electric field are analyzed. The results of corresponding numerical computations for n-Si at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time on the electron energy dependence. |
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