Electron-acoustic phonon field induced tunnel scattering
Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the tilting of semiconductor bands by the perturbing potential of an...
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| Видавець: | Інститут фізики конденсованих систем НАН України |
|---|---|
| Дата: | 2015 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2015
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/153584 |
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| Цитувати: | Electron-acoustic phonon field induced tunnel scattering / S.V. Melkonyan, A.L. Harutyunyan, T.A. Zalinyan // Condensed Matter Physics. — 2015. — Т. 18, № 2. — С. 23702: 1–12. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1535842019-06-15T01:29:27Z Electron-acoustic phonon field induced tunnel scattering Melkonyan, S.V. Harutyunyan, A.L. Zalinyan, T.A. Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the tilting of semiconductor bands by the perturbing potential of an electric field. In this case, electron eigenfunctions are not plane waves or Bloch functions. In low-field regime, the expressions for electron intraband transition probability and scattering time are obtained under elastic collision approximation. Dependencies of scattering time on electron energy and uniform electric field are analyzed. The results of corresponding numerical computations for n-Si at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time on the electron energy dependence. У статтi подано новий погляд на теорiю електронноакустичного розсiювання одного фонона. При цьому припускається, що невироджений напiвпровiдник має сферичну параболiчну зонну структуру. В основу перегляду теорiї покладено ефект нахилу напiвпровiдникових зон при накладаннi збурюючого потенцiалу електричного поля. У цьому випадку власнi функцiї електрона вже не є плоскими хвилями чи функцiями Блоха. В режимi слабких полiв отримано вирази для ймовiрностi електронних внутрiшньозонних переходiв i для часу розсiяння в наближеннi пружнiх зiткнень. Також проаналiзовано залежнiть часу розсiяння вiд енергiї електрона та напруженостi однорiдного електричного поля. Представлено результати вiдповiдних числових обчислень для n-Si при температурi 300 K. Встановлено вiдсутнiсть зламу на кривiй залежностi часу розсiяння електрона вiд енергiї електрона. 2015 Article Electron-acoustic phonon field induced tunnel scattering / S.V. Melkonyan, A.L. Harutyunyan, T.A. Zalinyan // Condensed Matter Physics. — 2015. — Т. 18, № 2. — С. 23702: 1–12. — Бібліогр.: 10 назв. — англ. 1607-324X PACS: 72.10-d, 63.20.kd DOI:10.5488/CMP.18.23702 arXiv:1506.03971 http://dspace.nbuv.gov.ua/handle/123456789/153584 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the tilting of semiconductor bands by the perturbing potential of an electric field. In this case, electron eigenfunctions are not plane waves or Bloch functions. In low-field regime, the expressions for electron intraband transition probability and scattering time are obtained under elastic collision approximation. Dependencies of scattering time on electron energy and uniform electric field are analyzed. The results of corresponding numerical computations for n-Si at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time on the electron energy dependence. |
| format |
Article |
| author |
Melkonyan, S.V. Harutyunyan, A.L. Zalinyan, T.A. |
| spellingShingle |
Melkonyan, S.V. Harutyunyan, A.L. Zalinyan, T.A. Electron-acoustic phonon field induced tunnel scattering Condensed Matter Physics |
| author_facet |
Melkonyan, S.V. Harutyunyan, A.L. Zalinyan, T.A. |
| author_sort |
Melkonyan, S.V. |
| title |
Electron-acoustic phonon field induced tunnel scattering |
| title_short |
Electron-acoustic phonon field induced tunnel scattering |
| title_full |
Electron-acoustic phonon field induced tunnel scattering |
| title_fullStr |
Electron-acoustic phonon field induced tunnel scattering |
| title_full_unstemmed |
Electron-acoustic phonon field induced tunnel scattering |
| title_sort |
electron-acoustic phonon field induced tunnel scattering |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/153584 |
| citation_txt |
Electron-acoustic phonon field induced tunnel scattering / S.V. Melkonyan, A.L. Harutyunyan, T.A. Zalinyan // Condensed Matter Physics. — 2015. — Т. 18, № 2. — С. 23702: 1–12. — Бібліогр.: 10 назв. — англ. |
| series |
Condensed Matter Physics |
| work_keys_str_mv |
AT melkonyansv electronacousticphononfieldinducedtunnelscattering AT harutyunyanal electronacousticphononfieldinducedtunnelscattering AT zalinyanta electronacousticphononfieldinducedtunnelscattering |
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2023-05-20T17:41:47Z |
| last_indexed |
2023-05-20T17:41:47Z |
| _version_ |
1796153880769200128 |