The perfect spin injection in silicene FS/NS junction
We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning t...
Збережено в:
| Дата: | 2017 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2017
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/156997 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The perfect spin injection in silicene FS/NS junction / H.-Y. Tian, N. Xu, G. Luo, Ch.-D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23702: 1–6 . — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where
the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model,
we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species,
where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity
of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed
light on making silicene-based spin and valley devices in the spintronics and valleytronics field. |
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