The perfect spin injection in silicene FS/NS junction
We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning t...
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| Дата: | 2017 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2017
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/156997 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The perfect spin injection in silicene FS/NS junction / H.-Y. Tian, N. Xu, G. Luo, Ch.-D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23702: 1–6 . — Бібліогр.: 28 назв. — англ. |
Репозитарії
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irk-123456789-1569972019-06-20T01:27:29Z The perfect spin injection in silicene FS/NS junction Tian, H.-Y. Xu, N. Luo, G. Ren, Ch.-D. We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed light on making silicene-based spin and valley devices in the spintronics and valleytronics field. Теоретично вивчається спiнова iнжекцiя з феромагнiтного силiцену в нормальний силiцен (FS/NS перехiд), коли намагнiченiсть в FS припускається з магнiтного ефекту близькостi. На основi граткової моделi силiцену показано, що чисто спiнова iнжекцiя може бути отримана пiдлаштуванням енергiй Фермi спiнiв двох сортiв, коли один сорт є в зонi спiн-орбiтальної взаємодiї, а iнший поза зоною. Крiм того, долинова полярнiсть спiнових сортiв може контролюватися перпендикулярно напрямленим електричним полем в FS областi. Нашi результати можуть пролити свiтло на створення на основi силiцену спiнових i долинових пристроїв для спiноелектронiки i велiтронiки. 2017 Article The perfect spin injection in silicene FS/NS junction / H.-Y. Tian, N. Xu, G. Luo, Ch.-D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23702: 1–6 . — Бібліогр.: 28 назв. — англ. 1607-324X PACS: 73.43.-f, 73.43.Nq, 72.80.Ey DOI:10.5488/CMP.20.23702 arXiv:1706.07278 http://dspace.nbuv.gov.ua/handle/123456789/156997 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where
the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model,
we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species,
where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity
of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed
light on making silicene-based spin and valley devices in the spintronics and valleytronics field. |
| format |
Article |
| author |
Tian, H.-Y. Xu, N. Luo, G. Ren, Ch.-D. |
| spellingShingle |
Tian, H.-Y. Xu, N. Luo, G. Ren, Ch.-D. The perfect spin injection in silicene FS/NS junction Condensed Matter Physics |
| author_facet |
Tian, H.-Y. Xu, N. Luo, G. Ren, Ch.-D. |
| author_sort |
Tian, H.-Y. |
| title |
The perfect spin injection in silicene FS/NS junction |
| title_short |
The perfect spin injection in silicene FS/NS junction |
| title_full |
The perfect spin injection in silicene FS/NS junction |
| title_fullStr |
The perfect spin injection in silicene FS/NS junction |
| title_full_unstemmed |
The perfect spin injection in silicene FS/NS junction |
| title_sort |
perfect spin injection in silicene fs/ns junction |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2017 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/156997 |
| citation_txt |
The perfect spin injection in silicene FS/NS junction / H.-Y. Tian, N. Xu, G. Luo, Ch.-D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 2. — С. 23702: 1–6
. — Бібліогр.: 28 назв. — англ. |
| series |
Condensed Matter Physics |
| work_keys_str_mv |
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| first_indexed |
2023-05-20T17:50:58Z |
| last_indexed |
2023-05-20T17:50:58Z |
| _version_ |
1796154234430816256 |