Integer quantum Hall effect and topological phase transitions in silicene

• Дата: 2017
• Автори: Liu, Y.L., Luo, G.X., Xu, N., Tian, H.Y., Ren, C.D.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики конденсованих систем НАН України 2017
• Назва видання: Condensed Matter Physics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/157026
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Integer quantum Hall effect and topological phase transitions in silicene / Y.L. Liu, G.X. Luo, N. Xu, H.Y. Tian, C.D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 4. — С. 43701: 1–7. — Бібліогр.: 22 назв. — англ.

We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at ν = 0, ±2, ±6, . . ., and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center ν = 0 Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus.