Integer quantum Hall effect and topological phase transitions in silicene
We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at ν = 0, ±2, ±6, ....
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| Дата: | 2017 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики конденсованих систем НАН України
2017
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157026 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Integer quantum Hall effect and topological phase transitions in silicene / Y.L. Liu, G.X. Luo, N. Xu, H.Y. Tian, C.D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 4. — С. 43701: 1–7. — Бібліогр.: 22 назв. — англ. |
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irk-123456789-1570262019-06-20T01:27:55Z Integer quantum Hall effect and topological phase transitions in silicene Liu, Y.L. Luo, G.X. Xu, N. Tian, H.Y. Ren, C.D. We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at ν = 0, ±2, ±6, . . ., and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center ν = 0 Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus. Проведено числове дослiдження впливу безладу на квантовий Голiв ефект (КГЕ) та квантовi фазовi переходи у сiлiценi на основi ґраткової моделi. Показано, що у випадку чистого зразка, сiлiцен проявляє нетрадицiйний КГЕ поблизу центру зони, де утворюються плато при ν = 0, ±2, ±6, . . ., i традицiйний КГЕ поблизу країв зони. При наявностi безладу, плато Гола можуть бути зруйнованi за рахунок спливання розтягнутих рiвнiв в напрямку до центру зони, де першими зникають вищi плато. Однак, центр ν = 0 плато Гола є бiльш чутливим до безладу i зникає при вiдносно слабiй силi безладу. Крiм того, поєднання електричного поля та властивої спiн-орбiтальної взаємодiї може призвести до квантових фазових переходiв вiд топологiчного дiелектрика до зонного дiелектрика у точцi нейтральностi заряду, що супроводжується утворенням додаткових плато квантової провiдностi Гола. 2017 Article Integer quantum Hall effect and topological phase transitions in silicene / Y.L. Liu, G.X. Luo, N. Xu, H.Y. Tian, C.D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 4. — С. 43701: 1–7. — Бібліогр.: 22 назв. — англ. 1607-324X PACS: 73.43.-f, 73.43.Nq, 72.80.Ey DOI:10.5488/CMP.20.43701 arXiv:1712.05348 http://dspace.nbuv.gov.ua/handle/123456789/157026 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase
transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at ν = 0, ±2, ±6, . . ., and a conventional QHE
near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of
extended levels toward the band center, in which higher plateaus disappear first. However, the center ν = 0
Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the
combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by
additional quantum Hall conductivity plateaus. |
| format |
Article |
| author |
Liu, Y.L. Luo, G.X. Xu, N. Tian, H.Y. Ren, C.D. |
| spellingShingle |
Liu, Y.L. Luo, G.X. Xu, N. Tian, H.Y. Ren, C.D. Integer quantum Hall effect and topological phase transitions in silicene Condensed Matter Physics |
| author_facet |
Liu, Y.L. Luo, G.X. Xu, N. Tian, H.Y. Ren, C.D. |
| author_sort |
Liu, Y.L. |
| title |
Integer quantum Hall effect and topological phase transitions in silicene |
| title_short |
Integer quantum Hall effect and topological phase transitions in silicene |
| title_full |
Integer quantum Hall effect and topological phase transitions in silicene |
| title_fullStr |
Integer quantum Hall effect and topological phase transitions in silicene |
| title_full_unstemmed |
Integer quantum Hall effect and topological phase transitions in silicene |
| title_sort |
integer quantum hall effect and topological phase transitions in silicene |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2017 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/157026 |
| citation_txt |
Integer quantum Hall effect and topological phase transitions in silicene / Y.L. Liu, G.X. Luo, N. Xu, H.Y. Tian, C.D. Ren // Condensed Matter Physics. — 2017. — Т. 20, № 4. — С. 43701: 1–7. — Бібліогр.: 22 назв. — англ. |
| series |
Condensed Matter Physics |
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2023-05-20T17:51:15Z |
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2023-05-20T17:51:15Z |
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1796154245593956352 |