Application of carbon as a barrier layer in Sc/Si multilayer X-ray mirrors
X-ray reflectometry in the hard X-ray region (λ = 0.154 nm) was used to investigate the barrier properties of carbon layers 0.2-1.3 nm thick in Sc/Si multilayer X-ray mirrors (MXMs) deposited by DC magnetron sputtering. Precise measurement of the MXM period makes it possible to record volumetric cha...
Збережено в:
| Дата: | 2018 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2018
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157155 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Application of carbon as a barrier layer in Sc/Si multilayer X-ray mirrors / Yu.P. Pershyn, I.Yu. Devizenko, V.S. Chumak, A.Yu. Devizenko, V.V. Kondratenko // Functional Materials. — 2018. — Т. 25, № 3. — С. 505-515. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | X-ray reflectometry in the hard X-ray region (λ = 0.154 nm) was used to investigate the barrier properties of carbon layers 0.2-1.3 nm thick in Sc/Si multilayer X-ray mirrors (MXMs) deposited by DC magnetron sputtering. Precise measurement of the MXM period makes it possible to record volumetric changes in the Sc/C/Si MXM with an accuracy better than 0.01 nm, thus the interaction of the carbon layers with the material of the matrix layers was revealed. The formation of carbide (Si-on-Sc interface) and carbide-silicide (Sc-on-Si nterface) layers was found. The reflectivity of the Sc/C/Si mirrors at the wavelength of ~ 46.9 nm was estimated. |
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