Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors

• Дата: 2018
• Автори: Hvozdiyevskyi, Ye.Ye., Denysyuk, R.O., Tomashyk, V.M., Malanych, G.P., Tomashyk, Z.F.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2018
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/157167
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Interaction of HNO₃-HI-citric acid aqueous solutions with CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te semiconductors / Ye.Ye. Hvozdiyevskyi, R.O. Denysyuk, V.M. Tomashyk, G.P. Malanych, Z.F. Tomashyk // Functional Materials. — 2018. — Т. 25, № 3. — С. 471-476. — Бібліогр.: 11 назв. — англ.

The chemical dissolution of CdTe single crystals and Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te, Cd₀.₂Hg₀.₈Te solid solutions in HNO3-HI-citric acid aqueous solutions has been investigated. The etching rate dependences of the mentioned above materials versus iodine and organic solvent content in the compositions of the chemical dissolution have been determined. The projections of constant etch rate surfaces (the Gibbs diagrams) have been constructed, the kinetic features of the dissolution has been shown and rate-limiting steps of the dissolution process and locate composition regions of polishing solutions have been identified. Using the experimental data, the compositions of polishing solutions and the conditions of the chemical-dynamic polishing of the CdTe, Zn₀.₀₄Cd₀.₉₆Te, Zn₀.₁Cd₀.₉Te and Cd₀.₂Hg₀.₈Te surfaces have been optimized.