Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays
In this paper experimental results on study of optical properties of Si wafers with surface textures in form of Si random pyramids, Si nanowire arrays, and pyramidal Si combined with Si nanowire arrays are presented. It is shown that the use of the metal-assisted chemical etching method allows to fa...
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Дата: | 2018 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
НТК «Інститут монокристалів» НАН України
2018
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Назва видання: | Functional Materials |
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Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157185 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays / A.A. Druzhinin, V.Y. Yerokhov, S.I. Nichkalo, O.Y. Ostapiv // Functional Materials. — 2018. — Т. 25, № 4. — С. 675-680. — Бібліогр.: 44 назв. — англ. |
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irk-123456789-1571852019-06-21T01:27:11Z Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays Druzhinin, A.A. Yerokhov, V.Y. Nichkalo, S.I. Ostapiv, O.Y. Characterization and properties In this paper experimental results on study of optical properties of Si wafers with surface textures in form of Si random pyramids, Si nanowire arrays, and pyramidal Si combined with Si nanowire arrays are presented. It is shown that the use of the metal-assisted chemical etching method allows to fabricate an array of Si nanowires, and a complex structure composed of Si pyramids with nanotextured side faces which possess a high degree of anti-reflecting ability. Experimental results of the absorbance and reflectance spectra measuring demonstrated that in comparison with other textures, the structures with nanotextured pyramids' side faces exhibit the highest absorption (~ 98 %) and lowest reflection values (~ 1 %) in all range of wavelength (300-1100 nm). The concept of a complex structure combining the advantages of pyramids and Si nanowires to achieve the omnidirectional light absorption and overcome the directional dependence of photovoltaic performance is discussed. 2018 Article Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays / A.A. Druzhinin, V.Y. Yerokhov, S.I. Nichkalo, O.Y. Ostapiv // Functional Materials. — 2018. — Т. 25, № 4. — С. 675-680. — Бібліогр.: 44 назв. — англ. 1027-5495 DOI:https://doi.org/10.15407/fm25.04.675 http://dspace.nbuv.gov.ua/handle/123456789/157185 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
topic |
Characterization and properties Characterization and properties |
spellingShingle |
Characterization and properties Characterization and properties Druzhinin, A.A. Yerokhov, V.Y. Nichkalo, S.I. Ostapiv, O.Y. Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays Functional Materials |
description |
In this paper experimental results on study of optical properties of Si wafers with surface textures in form of Si random pyramids, Si nanowire arrays, and pyramidal Si combined with Si nanowire arrays are presented. It is shown that the use of the metal-assisted chemical etching method allows to fabricate an array of Si nanowires, and a complex structure composed of Si pyramids with nanotextured side faces which possess a high degree of anti-reflecting ability. Experimental results of the absorbance and reflectance spectra measuring demonstrated that in comparison with other textures, the structures with nanotextured pyramids' side faces exhibit the highest absorption (~ 98 %) and lowest reflection values (~ 1 %) in all range of wavelength (300-1100 nm). The concept of a complex structure combining the advantages of pyramids and Si nanowires to achieve the omnidirectional light absorption and overcome the directional dependence of photovoltaic performance is discussed. |
format |
Article |
author |
Druzhinin, A.A. Yerokhov, V.Y. Nichkalo, S.I. Ostapiv, O.Y. |
author_facet |
Druzhinin, A.A. Yerokhov, V.Y. Nichkalo, S.I. Ostapiv, O.Y. |
author_sort |
Druzhinin, A.A. |
title |
Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays |
title_short |
Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays |
title_full |
Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays |
title_fullStr |
Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays |
title_full_unstemmed |
Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays |
title_sort |
development of anti-reflecting surfaces based on si micropyramids and wet-chemically etched si nanowire arrays |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2018 |
topic_facet |
Characterization and properties |
url |
http://dspace.nbuv.gov.ua/handle/123456789/157185 |
citation_txt |
Development of anti-reflecting surfaces based on Si micropyramids and wet-chemically etched Si nanowire arrays / A.A. Druzhinin, V.Y. Yerokhov, S.I. Nichkalo, O.Y. Ostapiv // Functional Materials. — 2018. — Т. 25, № 4. — С. 675-680. — Бібліогр.: 44 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT druzhininaa developmentofantireflectingsurfacesbasedonsimicropyramidsandwetchemicallyetchedsinanowirearrays AT yerokhovvy developmentofantireflectingsurfacesbasedonsimicropyramidsandwetchemicallyetchedsinanowirearrays AT nichkalosi developmentofantireflectingsurfacesbasedonsimicropyramidsandwetchemicallyetchedsinanowirearrays AT ostapivoy developmentofantireflectingsurfacesbasedonsimicropyramidsandwetchemicallyetchedsinanowirearrays |
first_indexed |
2023-05-20T17:51:39Z |
last_indexed |
2023-05-20T17:51:39Z |
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1796154262972006400 |