Theoretical study of the structural stability, electronic and magnetic properties of XVSb (X = Fe, Ni, and Co) half-Heusler compounds
The structural, electronic and magnetic properties of half-Heusler compounds XVSb (X = Fe, Co and Ni) are investigated by using the density functional theory with generalized gradient approximation (GGA), and Tran-Blaha modified Becke-Johnson (TB-mBJ) exchange potential approximation. It is found t...
Збережено в:
Дата: | 2018 |
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Автори: | , , , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики конденсованих систем НАН України
2018
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Назва видання: | Condensed Matter Physics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157469 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Theoretical study of the structural stability, electronic and magnetic properties of XVSb (X = Fe, Ni, and Co) half-Heusler compounds / M. Mokhtari, F. Dahmane, G. Benabdellah, L. Zekri, S. Benalia, N. Zekri // Condensed Matter Physics. — 2018. — Т. 21, № 4. — С. 43705: 1–9. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | The structural, electronic and magnetic properties of half-Heusler compounds XVSb (X = Fe, Co and Ni) are investigated by using the density functional theory with generalized gradient approximation (GGA), and Tran-Blaha
modified Becke-Johnson (TB-mBJ) exchange potential approximation. It is found that the half-metallic gaps are
generally reasonably widened by mBJ as compared to the GGA approximation. The magnetic proprieties of XVSb
(X = Fe, Co and Ni) are well defined within mBJ with an exact integer value of magnetic moment. The band gaps
given by TB-mBJ are in good agreement with the available theoretical data. The FeVSb exhibits a semiconductor
nature. The CoVSb and NiVSb present half-metallic behaviour with total magnetic moment of 1µB and 2µB in
good agreement with Slater-Pauling rule. These alloys seem to be a potential candidate of spintronic devices. |
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