Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals
Temperature dependencies for concentration and the Hall mobility of electrons for the n-GehSbi and n-GehSb, Aui single crystals uniaxially deformed along the crystallographic directions [100] and [111] are obtained on the basis of piezo-Hall effect measurements. A deformation-induced increase of th...
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| Дата: | 2019 |
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| Формат: | Стаття |
| Мова: | English |
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Інститут фізики конденсованих систем НАН України
2019
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/157477 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals / S.V. Luniov, P.F. Nazarchuk, A.I. Zimych, Yu.A. Udovytska, O.V. Burban // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13702: 1–10. — Бібліогр.: 22 назв. — англ. |
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irk-123456789-1574772019-06-21T01:28:45Z Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals Luniov, S.V. Nazarchuk, P.F. Zimych, A.I. Udovytska, Yu.A. Burban, O.V. Temperature dependencies for concentration and the Hall mobility of electrons for the n-GehSbi and n-GehSb, Aui single crystals uniaxially deformed along the crystallographic directions [100] and [111] are obtained on the basis of piezo-Hall effect measurements. A deformation-induced increase of the Hall mobility of electrons for n-GehSb, Aui single crystals at the uniaxial pressure along the crystallographic direction [100] has been revealed. A comparison of the obtained experimental results with the corresponding theoretical calculations of temperature dependencies of the Hall mobility showed that the obtained effect occurs at the expense of the reduction probability of electron scattering on the fluctuational potential. Its amplitude depends on the temperature and on the value of the uniaxial pressure. It has also been shown that an increase of the Hall mobility for the n-GehSb, Aui single crystals uniaxially deformed along the crystallographic direction [111] with an increasing temperature turns out to be insignificant and is observed only for the uniaxial pressures P < 0.28 GPa. A decrease of the Hall mobility of electrons at the expense of the deformational redistribution of electrons among the valleys of the germanium conduction band with different mobility should be taken into account in the present case. The Hall mobility magnitude for the uniaxially deformed n-GehSbi single crystals is determined only by the mechanisms of phonon scattering and we have not observed the effect of the growth of the Hall mobility with an increase of temperature or the magnitude of uniaxial pressure. This demonstrates a secondary role of the fluctuational potential in the present case. На основi вимiрювань п’єзо-холл-ефекту одержано температурнi залежностi концентрацiї та холiвської рухливостi електронiв для одновiсно деформованих вздовж кристалографiчних напрямкiв [100] та [111] монокристалiв n-GehSbi та n-GehSb, Aui. Виявлено деформацiйно-iндуковане зростання холiвської рухливостi електронiв для монокристалiв n-GehSb, Aui при одновiсному тисковi вздовж кристалографiчного напрямку [100]. Порiвняння одержаних експериментальних результатiв з вiдповiдними теоретичними розрахунками температурних залежностей холiвської рухливостi показали, що даний ефект виникає за рахунок зменшення ймовiрностi розсiяння електронiв на флуктуацiйному потенцiалi, амплiтуда якого залежить вiд температури та величини одновiсного тиску. Показано, що зростання холiвської рухливостi для одновiсно деформованих монокристалiв n-GehSb, Aui вздовж кристалографiчного напрямку [111] є незначним i спостерiгається лише для одновiсних тискiв P < 0.28 ГПа. В даному випадку необхiдно також враховувати зменшення холiвської рухливостi електронiв за рахунок деформацiйного перерозподiлу електронiв мiж долинами зони провiдностi германiю з рiзною рухливiстю. Для одновiсно деформованих монокристалiв n-GehSbi величина холiвської рухливостi при таких самих умовах визначається лише механiзмами фононного розсiяння i ефект зростання холiвської рухливостi при збiльшеннi температури або величини одновiсного тиску не спостерiгався. Це свiдчить про другорядну роль флуктуацiйного потенцiалу в даному випадку. 2019 Article Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals / S.V. Luniov, P.F. Nazarchuk, A.I. Zimych, Yu.A. Udovytska, O.V. Burban // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13702: 1–10. — Бібліогр.: 22 назв. — англ. 1607-324X PACS: 72.20.Fr, 72.10.-d DOI:10.5488/CMP.22.13702 arXiv:1903.11496 http://dspace.nbuv.gov.ua/handle/123456789/157477 en Condensed Matter Physics Інститут фізики конденсованих систем НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Temperature dependencies for concentration and the Hall mobility of electrons for the n-GehSbi and
n-GehSb, Aui single crystals uniaxially deformed along the crystallographic directions [100] and [111] are obtained on the basis of piezo-Hall effect measurements. A deformation-induced increase of the Hall mobility
of electrons for n-GehSb, Aui single crystals at the uniaxial pressure along the crystallographic direction [100]
has been revealed. A comparison of the obtained experimental results with the corresponding theoretical calculations of temperature dependencies of the Hall mobility showed that the obtained effect occurs at the expense of the reduction probability of electron scattering on the fluctuational potential. Its amplitude depends
on the temperature and on the value of the uniaxial pressure. It has also been shown that an increase of the
Hall mobility for the n-GehSb, Aui single crystals uniaxially deformed along the crystallographic direction [111]
with an increasing temperature turns out to be insignificant and is observed only for the uniaxial pressures
P < 0.28 GPa. A decrease of the Hall mobility of electrons at the expense of the deformational redistribution
of electrons among the valleys of the germanium conduction band with different mobility should be taken into
account in the present case. The Hall mobility magnitude for the uniaxially deformed n-GehSbi single crystals is
determined only by the mechanisms of phonon scattering and we have not observed the effect of the growth
of the Hall mobility with an increase of temperature or the magnitude of uniaxial pressure. This demonstrates
a secondary role of the fluctuational potential in the present case. |
| format |
Article |
| author |
Luniov, S.V. Nazarchuk, P.F. Zimych, A.I. Udovytska, Yu.A. Burban, O.V. |
| spellingShingle |
Luniov, S.V. Nazarchuk, P.F. Zimych, A.I. Udovytska, Yu.A. Burban, O.V. Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals Condensed Matter Physics |
| author_facet |
Luniov, S.V. Nazarchuk, P.F. Zimych, A.I. Udovytska, Yu.A. Burban, O.V. |
| author_sort |
Luniov, S.V. |
| title |
Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals |
| title_short |
Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals |
| title_full |
Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals |
| title_fullStr |
Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals |
| title_full_unstemmed |
Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals |
| title_sort |
mechanisms of electron scattering in uniaxially deformed n-ge‹sb, au› single crystals |
| publisher |
Інститут фізики конденсованих систем НАН України |
| publishDate |
2019 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/157477 |
| citation_txt |
Mechanisms of electron scattering in uniaxially deformed n-Ge‹Sb, Au› single crystals / S.V. Luniov, P.F. Nazarchuk, A.I. Zimych, Yu.A. Udovytska, O.V. Burban // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13702: 1–10. — Бібліогр.: 22 назв. — англ. |
| series |
Condensed Matter Physics |
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2023-05-20T17:52:25Z |
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2023-05-20T17:52:25Z |
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