Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
Thermal conductivity of single-crystal boron-doped diamonds (BDD) with ~ 2∙10¹⁹ cm⁻³ (~ 120 ppm) and 5∙10¹⁹ cm⁻³ (~ 300 ppm) boron content was studied by a steady-state method in a temperature range of 20–400. K. The obtained data were analyzed within Callaway model framework. The values of dislocat...
Збережено в:
| Дата: | 2019 |
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| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут надтвердих матеріалів ім. В.М. Бакуля НАН України
2019
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| Назва видання: | Сверхтвердые материалы |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/167288 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects / D. Prikhodko, S. Tarelkin, V. Bormashov, A. Golovanov, M. Kuznetsov, D. Teteruk, N. Kornilov, A. Volkov, A. Buga // Надтверді матеріали. — 2019. — № 1 (237). — С. 33-41. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Thermal conductivity of single-crystal boron-doped diamonds (BDD) with ~ 2∙10¹⁹ cm⁻³ (~ 120 ppm) and 5∙10¹⁹ cm⁻³ (~ 300 ppm) boron content was studied by a steady-state method in a temperature range of 20–400. K. The obtained data were analyzed within Callaway model framework. The values of dislocation density obtained from best fit of experimental data and from density of etch pits measuring were compared. Their discrepancy suggests presence of some other boron-related defects in crystal lattice. |
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